Panasonic issued a brief announcement today that the company anticipates availability of 2 megabit ReRAM samples by the end of this year, with expectations of mass production in 2012. The company intends to focus on small-capacity non-volatile ReRAM configurations intended for home electronic products.
ReRAM tends to cover a wide range of materials, and it is not clear from today’s brief announcement what material was used in the process.
However the announcement follows a paper presented at the International Electron Devices Meeting (IEDM) in San Francisco in December 2008. That paper described a tantalum and oxygen (TaOx) process for a non-volatile memory cell with endurance over 109 cycles and data retention in excess of 10 years at 85 degrees centigrade. At that time, the company had produced 8 Kbit 1T1R memory arrays using a standard 0.18 micron CMOS process.
Key words: ReRAM Panasonic Tantalum TaOx
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